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FDMS7676 N-Channel PowerTrench(R) MOSFET
July 2009
FDMS7676
N-Channel PowerTrench(R) MOSFET
30 V, 5.5 m Features
Max rDS(on) = 5.5 m Max rDS(on) = 7.6 m at VGS = 10 V, ID = 19 A at VGS = 4.5 V, ID = 15 A
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Advanced Package and Silicon design for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications MSL1 robust package design 100% UIL tested RoHS Compliant
Applications
IMVP Vcore Switching for Notebook VRM Vcore Switching for Desktop and Server OringFET / Load Switch DC-DC Conversion
Top
Bottom Pin 1 S S D S G D D D D D D D 5 6 7 8 4 3 2 1 G S S S
Power 56
MOSFET Maximum Ratings TA = 25 C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 C TA = 25 C (Note 1a) (Note 3) TC = 25 C TC = 25 C TA = 25 C (Note 1a) (Note 4) Ratings 30 20 28 76 16 90 72 48 2.5 -55 to +150 mJ W C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
R R
JC JA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a)
2.6 50
C/W
Package Marking and Ordering Information
Device Marking FDMS7676 Device FDMS7676 Package Power 56 Reel Size 13 '' Tape Width 12 mm Quantity 3000 units
(c)2009 Fairchild Semiconductor Corporation FDMS7676 Rev A
1
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Electrical Characteristics TJ = 25 C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
FDMS7676 N-Channel PowerTrench(R) MOSFET
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current, Forward ID = 250 A, VGS = 0 V ID = 250 A, referenced to 25 C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V 30 15 1 100 V mV/C A nA
On Characteristics
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 A ID = 250 A, referenced to 25 C VGS = 10 V, ID = 19 A VGS = 4.5 V, ID = 15 A VGS = 10 V, ID = 19 A, TJ = 125 C VDS = 5 V, ID = 19 A 1.25 2.0 -7 3.8 5.4 5.2 64 5.5 7.6 7.5 S m 3.0 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 2225 685 90 0.7 2960 910 130 1.5 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 15 V, ID = 19 A VDD = 15 V, ID = 19 A, VGS = 10 V, RGEN = 6 13 5 25 4 31 14 7.6 3.7 23 10 40 10 44 19 ns ns ns ns nC nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr ta tb S trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Softness (tb/ta) Reverse Recovery Time Reverse Recovery Charge IF = 19 A, di/dt = 300 A/ s
JC
VGS = 0 V, IS = 2.1 A VGS = 0 V, IS = 19 A
(Note 2) (Note 2)
0.7 0.8 32 14
0.95 1.1 51 24
V ns nC nC nC
IF = 19 A, di/dt = 100 A/ s
15 17 1.1 26 25
is guaranteed by design while R
42 40
CA is
ns nC
determined by
Notes: 1. R JA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R the user's board design.
a. 50 C/W when mounted on a 1 in2 pad of 2 oz copper.
b. 125 C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. EAS of 72 mJ is based on starting TJ = 25 C, L = 1 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 17 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7676 Rev. A
2
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FDMS7676 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
90
VGS = 10 V VGS = 5 V ID, DRAIN CURRENT (A) VGS = 4 V
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
6 5
VGS = 3.5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
60
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
4
VGS = 4 V
VGS = 4.5 V
3 2 1
VGS = 5 V VGS = 10 V VGS = 4.5 V
30
VGS = 3.5 V
0 0.0
0.5
1.0
1.5
2.0
0 0 30 60 90
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
1.6
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
SOURCE ON-RESISTANCE (m )
16
ID = 19 A VGS = 10 V
rDS(on), DRAIN TO
1.4 1.2 1.0 0.8 0.6 -75
ID = 19 A
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
12
8
TJ = 125 oC
4
TJ = 25 oC
-50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
0 2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Junction Temperature
90
IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance vs Gate to Source Voltage
100
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
VGS = 0 V
10 1 0.1 0.01
TJ = 150 oC
ID, DRAIN CURRENT (A)
60
VDS = 5 V
TJ = 25 oC
TJ = 150 oC
30
TJ = 25 oC TJ = -55 oC
TJ = -55 oC
0 0 1 2 3 4 5
VGS, GATE TO SOURCE VOLTAGE (V)
0.001 0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
FDMS7676 Rev. A
3
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FDMS7676 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
10
VGS, GATE TO SOURCE VOLTAGE (V) ID = 19 A CAPACITANCE (pF)
5000
8
VDD = 10 V VDD = 15 V VDD = 20 V
Ciss
6 4 2 0 0 4 8 12 16 20 24 28 32
Qg, GATE CHARGE (nC)
1000
Coss
100
50 0.1
f = 1 MHz VGS = 0 V
Crss
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
90
ID, DRAIN CURRENT (A)
50
IAS, AVALANCHE CURRENT (A)
60
VGS = 10 V VGS = 4.5 V
10
TJ = TJ = 125 oC
25 oC TJ = 100 oC
30
R
JC = 2.6
o
Limited by Package
C/W
1 0.01
0.1
1
10
100
0 25
50
75
100
o
125
150
tAV, TIME IN AVALANCHE (ms)
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching Capability
200 100
ID, DRAIN CURRENT (A)
Figure 10. Maximum Continuous Drain Current vs Case Temperature
1000
VGS = 10 V
SINGLE PULSE R JA = 125 oC/W TA = 25 oC
10
100 s 1 ms
P(PK), PEAK TRANSIENT POWER (W)
100
1
THIS AREA IS LIMITED BY rDS(on)
10 ms 100 ms 1s 10 s DC
10
0.1
SINGLE PULSE TJ = MAX RATED R
JA = 125
o
C/W
TA = 25 oC
1 0.5 -4 10 10
-3
0.01 0.01
0.1
1
10
100 200
10
-2
10
-1
1
10
100
1000
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
FDMS7676 Rev. A
4
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FDMS7676 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
2 1
NORMALIZED THERMAL IMPEDANCE, Z JA DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1
0.01
SINGLE PULSE R
JA o
t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x Z JA x R
= 125 C/W
-2 -1
JA
+ TA
0.001 -4 10
10
-3
10
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve Figure 15.
20 16
di/dt = 300 A/ s CURRENT (A)
12 8 4 0 -4 0 25 50 75
TIMES (nS)
100
125
150
Figure 14. Body Diode Reverse Recovery Characteristics
FDMS7676 Rev. A D
5
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FDMS7676 N-Channel PowerTrench(R) MOSFET
Dimensional Outline and Pad Layout
FDMS7676 Rev. A
6
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FDMS7676 N-Channel PowerTrench(R) MOSFET
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPMTM PowerTrench(R) F-PFSTM The Power Franchise(R) PowerXSTM Build it NowTM FRFET(R) (R) Global Power ResourceSM Programmable Active DroopTM CorePLUSTM Green FPSTM QFET(R) CorePOWERTM TinyBoostTM QSTM Green FPSTM e-SeriesTM CROSSVOLTTM TinyBuckTM Quiet SeriesTM GmaxTM CTLTM TinyLogic(R) RapidConfigureTM GTOTM Current Transfer LogicTM TINYOPTOTM IntelliMAXTM EcoSPARK(R) TinyPowerTM EfficentMaxTM ISOPLANARTM TM TinyPWMTM EZSWITCHTM * Saving our world, 1mW /W /kW at a timeTM MegaBuckTM TinyWireTM TM* SmartMaxTM MICROCOUPLERTM TriFault DetectTM MicroFETTM SMART STARTTM TRUECURRENTTM* MicroPakTM SPM(R) (R) SerDesTM STEALTHTM MillerDriveTM (R) Fairchild SuperFETTM MotionMaxTM (R) Fairchild Semiconductor SuperSOTTM-3 Motion-SPMTM FACT Quiet SeriesTM UHC(R) SuperSOTTM-6 OPTOLOGIC(R) (R) FACT OPTOPLANAR(R) Ultra FRFETTM SuperSOTTM-8 (R) (R) FAST UniFETTM SupreMOSTM FastvCoreTM VCXTM SyncFETTM FETBenchTM VisualMaxTM Sync-LockTM PDP SPMTM (R) FlashWriter * XSTM (R)* Power-SPMTM FPSTM
tm
tm
tm
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I40
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FDMS7676 Rev. A
7
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